The co-precipitation method can obtain a high S BET through a homogeneous solid solution (i.e., 103 m 2 g −1 for NiCeZr(C) and 72 m 2 g −1 for BNiCeZr(C)). An obvious and unavoidable decrease in surface area with the doping of boron during impregnation was noticed.
The invention relates to boron-doped graphene and a preparation method thereof. The preparation method comprises the following steps: heating a mixture of a boron source and an organic salt or an organic acid and salts to 300-1600 DEG C in a non-oxidizing atmosphere, so as to obtain a mixture of boron-doped graphene and a metal oxide; and removing the metal …
Here we demonstrate a very simple, yet viable method for selective boron doping in natural SCD (nSCD) via an easy thermal diffusion process at a much lower temperature than those used in any other doping methods. We use heavily doped silicon nanomembranes (SiNMs), which are now easily accessible, as our dopant carrying medium.
Boron Doping for p-Type -FeSi 2 Films by Sputtering Method Zhengxin LIU 2, Masato OSAMURA, Teruhisa OOTSUKA, Shinan WANG, Ryo KURODA1;y, Yasuhiro FUKUZAWA2, Yasuhito SUZUKI, Takahiro MISE, Naotaka OTOGAWA2, Yasuhiko NAKAYAMA2, Hisao TANOUE1 and Yunosuke MAKITA1 System Engineers' Co., Ltd., Yamato, Kanagawa 242 …
An open diffusion method of doping a silicon body with boron. In a first open diffusion heating step, a boron glass is deposited upon the silicon body with a silicon-rich boron phase (SiB6) formed beneath the glass where deposition is directly on silicon.
the object of the invention is a process for p-type boron doping of silicon wafers placed on a support in the chamber of a furnace of which one end comprises a …
Graphene based materials can be effectively modified by doping in order to specifically tailor their properties toward specific applications. So far the most used and widely investigated dopant heteroatom is probably nitrogen. However, boron is also an equally important element that can induce novel and comp 2016 Journal of Materials Chemistry A HOT Papers …
A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly …
According to the previous paper [53], both doping boron catalysts, BNiCeZr (C) and BNiCeZr (I), were prepared by impregnation with the addition of 1.6 wt% H 3 BO 3 (Ni/B molar ratio of 1.0) into NiCeZr (C) and NiCeZr (I), respectively. Then, they were dried further and calcined at 110 and 400 °C, respectively. Characterization of catalysts
Kyoto University researchers have developed a new method for the boron-doping of two dimensional carbon materials, which is expected to be a promising approach towards the development of highly ...
Neutron transmutation doping (NTD) is an unusual doping method for special applications. Most commonly, it is used to dope silicon n-type in high-power electronics and semiconductor detectors . It is based on the conversion of the Si-30 isotope …
1. Definition. Doping means the introduction of impurities into the semiconductor crystal to deliberately change its conductivity due to deficiency or excess of electrons. In contrast to the doping during the wafer fabrication, where the entire wafer is doped, this article describes the partial doping of silicon.
As liquid sources boron bromide BBr 3 or phosphoryl chloride POCl 3 can be used. A carrier gas is led through the liquids and thus transporting the dopant in gaseous state. Since not the entire wafers should be doped, certain areas can be masked with silicon dioxide.
The effect of boron doping with 0–11 at% concentration on structural, optical and electrical properties of zinc oxide nanopowder synthesized by a hydrothermal method has been reported. We have performed X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), optical, Hall and resistivity measurements on the samples.
Doping graphene with boron: a review of synthesis methods, physicochemical characterization, and emerging applications Stefano Agnoli *a and Marco Favaro b Author affiliations Abstract Graphene based materials can be effectively modified by doping in order to specifically tailor their properties toward specific applications.
Doping boron atoms into the framework of CN catalysts by hydrothermal method further improved their catalytic performance. The best catalyst (o-BCN-1100) synthesized by doping boron atoms followed by oxidation was demonstrated to have an excellent reaction stability and gives 13.5% ethylene yield.
The object of the invention is a process for P-type boron doping of silicon wafers placed on a support in the chamber of a furnace of which one end comprises a wall in which means for introducing reactive gases and a gas carrying a boron precursor in gaseous form are located, whereby said process comprises the stages that consist in: a) In the chamber, reacting the …
An open diffusion method of doping a silicon body with boron. In a first open diffusion heating step, a boron glass is deposited upon the silicon body with a silicon-rich boron phase (SiB 6) formed beneath the glass where deposition is directly on silicon.The boron glass and SiB 6 layer are formed by exposing the silicon body to a gas mixture containing a predetermined boron …
PHYSICAL REVIEW B 84, 094117 (2011) Efficient method for Li doping of α-rhombohedral boron H. Dekura,* K. Shirai,† and A. Yanase Nanoscience and Nanotechnology Center, Institute of Scientific and Industrial Research (ISIR), Osaka University, 8-1 Mihogaoka,
Conductive polymers can be doped by adding chemical reactants to oxidize, or sometimes reduce, the system so that electrons are pushed into the conducting orbitals within the already potentially conducting system. There are two primary methods of doping a conductive polymer, both of which use an oxidation-reduction (i.e., redox) process. Chemical doping involves …
A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is …
Doping means the introduction of impurities into a semiconductor crystal to the defined modification of conductivity. Two of the most important materials silicon can be doped with, are boron (3 valence electrons = 3-valent) and phosphorus (5 valence electrons = 5-valent).